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| WFP630 FP63 Silicon N-Channel MOSFET Features 9A, 200V, RDS(on)(Max 0.4)@VGS=10V Ultra-low Gate Charge(Typical 22nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. G D S TO220 Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Parameter Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) Derating Factor above 25 Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1) Value 200 Units V ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL 9 5.7 36 30 160 7.2 5.5 72 0.57 -55~150 300 A A A V mJ mJ V/ns W W/ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min - Value Typ 0.5 - Max 1.74 62.5 Units /W /W /W Rev, C Dec.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 WFP630 Electrical Characteristics (Tc = 25C) 25 Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qg Qgs Qgd Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 250 A, VGS = 0 V ID=250A, Referenced to 25 Min 30 200 - Type 0.2 Max 100 10 - Unit nA V A V V/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf VDS = 10 V, ID =250 A VGS = 10 V, ID = 4.5A VDS = 50 V, ID = 4.5A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =100 V, ID = 9 A RG=12 2 7.05 500 85 22 11 70 60 4 0.4 720 110 29 30 150 130 ns pF V S toff (Note4,5) VDD = 160 V, VGS = 10 V, ID = 9 A (Note4,5) - 65 140 - 22 3.6 10 29 nC Source-Drain Ratings and Characteristics (Ta = 25C) Source- 25 Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 9 A, VGS = 0 V IDR = 9A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 1.4 140 1.1 Max 9 36 1.5 2.2 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0,Starting TJ=25 3.ISD9A,di/dt300A/us, VDD Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig. 1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.8 Capacitance Characteristics Fig.9 Breakdown Voltage Variation vs. Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WFP630 TO-220 Package Dimension Unit: mm 7/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. |
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